Nand flash architecture with multi-level row decoding

ABSTRACT

A NAND flash memory device is disclosed. The NAND flash memory device includes a NAND flash memory array defined as a plurality of sectors. Row decoding is performed in two levels. The first level is performed that is applicable to all of the sectors. This can be used to select a block, for example. The second level is performed for a particular sector, to select a page within a block in the particular sector, for example. Read and program operations take place to the resolution of a page within a sector, while erase operation takes place to the resolution of a block within a sector.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application No.61/157,594, filed Mar. 5, 2009, the content which is incorporated hereinby reference in its entirety.

FIELD

A NAND flash memory device is disclosed.

BACKGROUND

In conventional NAND flash memory, erasing is performed on a per-blockbasis. In contrast, read and program operation takes place on a per-pagebasis.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will now be described with reference to the attacheddrawings in which:

FIG. 1 is a block diagram of a typical memory core architecture in NANDflash memory;

FIG. 2 is a block diagram of an example NAND flash device within whichone of the NAND core architectures described herein might beimplemented;

FIG. 3 is a block diagram of memory core architecture for NAND flashmemory provided by an example embodiment;

FIG. 4 is a block diagram of a memory core architecture in a NAND flashmemory provided by an example embodiment;

FIGS. 5 and 6 show single page read and multiple page read operation forthe example embodiment of FIG. 3, respectively;

FIG. 7 is a block diagram of a memory core architecture in NAND flashmemory in accordance with an example embodiment;

FIG. 8 is a block diagram of a global row decoder in accordance with anexample embodiment;

FIG. 9 is a circuit diagram of an example implementation of a singleblock decoder of FIG. 8;

FIG. 10 is a block diagram of another example implementation of a singleblock decoder of FIG. 8;

FIG. 11 is a block diagram of a local row decoder in accordance with anexample embodiment;

FIG. 12 is a circuit diagram of an example implementation of a singlesector decoder of FIG. 10;

FIG. 13 is a timing diagram for read in accordance with an exampleembodiment;

FIG. 14 is a timing diagram for program in accordance with an exampleembodiment; and

FIG. 15 is a timing diagram for erase in accordance with an exampleembodiment.

DETAILED DESCRIPTION

FIG. 1 illustrates a memory core architecture in a NAND flash memory.The NAND flash memory core comprises a NAND memory cell array 100, a rowdecoder 102 and a page buffer circuit 103 and column decoder 104. Therow decoder 102 is connected to the NAND memory cell array 100 by a setof wordlines, only one wordline 106 being shown in FIG. 1 forsimplicity. The page buffer circuit 103 is connected to the NAND memorycell array 100 through a set of bitlines, only one bitline 108 beingshown in FIG. 1 for simplicity.

The cell array structure of the NAND flash memory comprises a set of nerasable blocks. Each block is subdivided into m programmable pages(rows).

Erasing for the memory core architecture of FIG. 1 is performed on aper-block basis. In contrast, read and program operation takes place ona per-page basis.

A NAND flash memory having the core architecture of FIG. 1 flash suffersfrom at least three limitations. First, bits can only be programmed onlyafter erasing a target memory array. Second, each cell can only sustaina limited number of erasures, after which it can no longer reliablystore data. In other words, there is a limitation in the number of eraseand program cycle to cells (i.e. endurance, typically 10,000˜100,000cycles). Third, the minimum erasable array size is much bigger than theminimum programmable array size. Due to these limitations, sophisticateddata structures and algorithms are implemented to effectively use flashmemories.

When the flash controller requests data write or data modification intoeven only a small portion of the page, typically the block containing apage to be modified will be reprogrammed to one of free (empty) blocksdeclared by an erase-unit reclamation process. In this case, valid pagescontaining original data in the original block are copied to theselected free block. After that, the new block having modified data in apage with original data in the rest of pages is remapped to the validblock address by a virtual mapping system in the flash controller. Theoriginal block is now obsolete and will be declared as a free block bythe erase-unit reclamation process after it has been erased.

The limited number of erase-program cycles (endurance) limits thelifetime of a flash device. It would be advantageous to have a lifetimethat is as long as possible, and this depends on the pattern of accessto the flash device. Repeated and frequent rewrites to a single cell orto a small number of cells will bring the onset of failures soon and soend the useful lifetime of the device quickly.

Moreover, in a flash memory system having multiple flash devices, ifthere is significantly uneven use among devices in the flash memorysystem, one device will reach an end of lifetime at a time when otherdevices have significant life left in them. When the one device reachesan end of life time, the entire memory system may have to be replaced,and this greatly reduces the life time of the flash memory system.

If rewrites can be evenly distributed to all cells of the device, theonset of failures will be delayed as much as possible, maximizing thelifetime of the device. To extend the device lifetime by even use acrossall the cells of the device, many wear-levelling techniques andalgorithms have been proposed and implemented in flash memory systems.

The cell arrays of NAND flash have been so miniaturized over the courseof time that they have reached the point where any further reduction inprocess technology is expected to drastically reduce the maximum numberof erase-program cycles.

According to one broad aspect, provided is a NAND flash memory core withmulti-level row decoding.

According to another broad aspect, provided is a NAND flash memorydevice comprising: peripheral circuitry, input/output pads, and a highvoltage generator; a NAND flash memory core comprising: a NAND memorycell array comprising a plurality of rows by a plurality of columns, thecells arranged into a plurality of sectors, each sector comprising thecells of a plurality of said columns; the cells arranged into aplurality of blocks, each block comprising cells of a plurality of saidrows; the NAND memory cell array configured for erasure to a resolutionof one block within one sector, and configured for read and program to aresolution of one row within one sector.

According to another broad aspect of, provided is a method in a NANDflash memory core comprising: performing multi-level row decoding. Dueto the size mismatch between read/program and erase, the block copyoperations described above introduce unnecessary program operationsbecause unaffected data in pages of the block are reprogrammed (copied)to the new block along with the modified data. There could be a dramaticextension to the device lifetime if the minimum erasable array size issmaller than an entire block.

FIG. 2 is a block diagram of a device 150 containing a NAND flash memorydevice 152. The NAND flash memory device 152 has a memory core withmulti-level row decoding, generally indicated at 158. In addition, theNAND flash memory device 152 has a peripheral circuitry 154, input andoutput pads 156, and high voltage generator(s) 160. The peripheralcircuitry 154 may, for example, comprise one or more of input and outputbuffers for address and data, input buffers for control and commandsignals, state machine including command decoder, address counter, rowand column per-decoder, and status registers. Device 150 may be anydevice having a use for NAND flash memory device 152. Specific examplesinclude a mobile device, a memory stick, a camera, a solid state diskdrive, and an MP3 player. Flash device 152 may form a permanent part ofthe device 150, or may be removable. Detailed example implementations ofthe memory core with multi-level row decoding are provided below. Moregenerally, any memory core with multi-level row deciding iscontemplated. The cell array is formed of sectors, each sectorcomprising a plurality of columns of cells. The cells also form blocks,each block comprising a plurality of rows, also referred to as pages. Insome embodiments, multi-level row decoding involves performing a firstlevel of row decoding for all of the sectors, and for each sector,performing a second level of row decoding only for that sector. In someembodiments, erasing within the memory core is performed to a resolutionof one block within one sector, and read and program operations takeplace to a resolution of one row within one sector.

Referring now to FIG. 3, shown is a core architecture provided by anexample embodiment. The core architecture includes a NAND memory cellarray that is implemented as at least two NAND memory cell arraysectors, hereinafter simply “sectors”, there being four sectors200,202,204,206 shown in the illustrated example. The NAND memory cellarray is formed of a plurality of blocks which in turn are formed ofpages, also referred to as rows. The cells of each sector of the NANDmemory cell array are also arranged in columns (not shown). Row decodingfunctionality is provided by a global row decoder 208 that performs rowdecoding to the level of blocks, in combination with a set of local rowdecoders 210,212,214,216 that perform decoding to the level of a pagewithin a block selected by the global row decoder. More generally, theglobal row decoder 208 performs a first level of row decoding to selecta subset of the plurality of rows. In example embodiments describedherein in detail, the selectable subsets are contiguous blocks, but thisneed not be the case in all implementations. The local row decoders 210,212, 214, 216 perform a second level of row decoding to select a rowwithin the subset of the plurality of rows selected by the global rowdecoder 208. The local row decoders 210,212,214,216 include one localrow decoder associated with each respective sector 200,202,204,206 andperform page selection local to the associated sector. Page bufferfunctionality is implemented with four page buffer circuits220,222,224,226, one per sector 200,202,204,206. Column decoderfunctionality is implemented with four column decoders 221,223,225,227,one per sector 200,202,204,206.

Read operation is performed to the resolution of a page within a blockwithin a sector. Program operation is also performed to the resolutionof a page within a block within a sector. However, a page within a blockwithin a sector is erased before it is programmed. Erase operation isperformed to the resolution of a block within a sector.

For a read operation, the global row decoder 208 is used to select ablock of the plurality of blocks of the NAND memory cell array. Sectorselection is performed by performing column selection with the pagebuffer circuit and column decoder associated with the desired memorysector. This can be achieved, for example, by a memory controllerenabling the associated page buffer circuit and column decoder and/orsending column decoder signals to the associated page buffer circuit andcolumn decoder. Page selection is performed by the local row decoderassociated with the selected sector. In this manner, a selected pagewithin a selected block within a selected sector can be read. During aread operation, the data of the selected page within the selected blockand within the selected sector is sensed and latched into senseamplifier (not shown) and page buffer circuit of the selected sector.After that the data stored in the page buffer circuit is sequentiallyread out through the associated column decoder and, for example, storedin a global buffer (not shown).

For an erase operation, the global row decoder 208 is used to select ablock of the plurality of blocks of the NAND memory cell array. Sectorselection is performed by performing column selection with the pagebuffer circuit and column decoder associated with the desired memorysector. Then an appropriate erase signal is applied. In this manner, aselected block within a selected sector can be erased.

For a program operation, the global row decoder 208 is used to select ablock of the plurality of blocks of the NAND memory cell array. Sectorselection is performed by performing column selection with the pagebuffer circuit and column decoder associated with the desired memorysector. Page selection is performed by the local row decoder associatedwith the selected sector. Then, the contents of the page buffer circuitassociated with the selected sector are programmed to the selected pagewithin the selected block within the selected sector. During a programoperation, the input data (for example from a global buffer circuit, notshown) is sequentially loaded into the page buffer circuit of theselected sector via the associated column decoder. The input datalatched in the page buffer circuit is then programmed into the selectedpage of the selected sector.

FIG. 4 shows another example of a core architecture provided by anexample embodiment. This example embodiment is similar to FIG. 2 andlike components have been labelled using like reference numbers. Theexample embodiment of FIG. 4 has a block pre-decoder 230 connectedthrough block decoder lines 231 to the global row decoder 208. Theglobal row decoder 208 is connected to the memory array through aplurality of blocklines, one per block although only one blockline 240is shown in the illustrated example. The blocklines are commonlyconnected to all local row decoders 210,212,214,216. Each local rowdecoder 210,212,214,216 is also driven by a respective set of pagedecoder lines 233,235,237,239 from a respective page decoder232,234,236,238. Each local row decoder 210,212,214,216 is connected tothe corresponding sector though a plurality of wordlines, only one shownper sector indicated at 211,213,215,219.

In operation, to select a particular block, the block pre-decoder 230converts an input, for example from a memory controller, into anappropriate signal on block decoder lines 231. The global row decoder208 selects one of block lines. To select a particular page within aparticular sector, the page decoder of the associated sector (one ofpage decoders 232,234,236,238) is enabled and used to select theparticular page within the selected block.

An example of single sector selection is depicted in FIG. 5 which showsselection of a page within a block for local row detector 210. In someexample embodiments, the circuit is configured to allow multiple pagedecoders to be enabled simultaneously. In such example embodiments,within the selected block, selection of a respective page withinmultiple sectors can be performed by enabling multiple page decoders. Anexample of multiple sector selection is shown in FIG. 6 which showsselection of a row within a block by each of row decoders 210 and 214.The blockline selects one of blocks within all of the sectors while pagedecoder lines select one of pages (i.e. wordlines) within the selectedblock in each sector.

In this example embodiment, a read operation will result in one ormultiple page buffer circuits containing read-out data. The contents ofthese page buffer circuits are then individually read out. A programoperation will result in the contents of one or multiple page buffercircuits being programmed simultaneously. Typically, this will have beenpreceded by a series of write to page buffer operations by which themultiple page buffer circuits are written to sequentially.

FIG. 7 shows more detailed core architecture provided by an exampleembodiment wherein again this example embodiment is similar to FIG. 3and like components have been labelled using like reference numbers. InFIG. 7, as in other block diagrams, certain components (such as, forexample, column decoders) are not shown so as not to obscure features ofexample embodiments. In the example, a NAND core (this can be an entiredevice core architecture, a plane or a bank) comprises four sectors andthe page size of each sector is 512 bytes. More generally, the page sizeof each sector is at least one byte. In this example, there are 2048blocks collectively indicated at 217. Each block is split into foursectors. The global row decoder 208 is connected to all of the local rowdecoders 210, 212, 214, 216 in common by 2048 blocklines (not shown),one per block. Each block has 32 pages.

An example implementation of the global row decoder 208 of FIG. 7 isdepicted in FIG. 8. The global row decoder 208 has a respective blockdecoder for each block, namely 2048 block decoders collectivelyindicated at 209 corresponding to the number of blocks. Each of theblock decoders is connected to the block decoder lines 231. In thisexample, the block decoder lines 231 comprises lines xp,xq,xr,xt forcarrying block decoder address signals Xp,Xq,Xr and Xt. Xp,Xq,Xr and Xtare the pre-decoded lines. Xp corresponds to Address A₀˜A₂. Xqcorresponds to Address A₃˜A₅. Xr corresponds to Address A₆˜A₈. Xtcorresponds to Address A₉˜A₁₀ Each block decoder drives a respectiveblockline (not shown). The block decoder associated with the blockindicated by the address signals on block decoder lines 231 drives therespective blockline to be in a select state, and all other blocklinesare in a de-select state.

An example circuit implementation of a single block decoder is depictedin FIG. 9. It is noted that there are many variations on circuitimplementation for the block decoder, and that such variations should bereadily apparent to one skilled in the art.

The circuit has a block decoder address latch 302 having a latch outputBDLCH_out that is reset to 0V when the RST_BD is high (actually shortpulse) and latched when the LCHBD is high (which may be a short pulse)with valid predecoded address signals of Xp, Xq, Xr and Xt (blockdecoder lines) received at NAND logic gate 303. Detailed timinginformation is shown in FIGS. 12, 13 and 14 described subsequently.

The block decoder has a local charge pump 300 that is a high voltageswitching circuit to provide voltages during read, program and eraseoperations. Local charge pump 300 includes a depletion mode n-channelpass transistor 352, a native n-channel diode-connected boost transistor354, a high breakdown voltage n-channel decoupling transistor 356, ahigh breakdown voltage n-channel clamp transistor 358, a NAND logic gate360, and a capacitor 362. NAND logic gate 360 has one input terminal forreceiving the latch output BDLCH_out and another input terminal forreceiving control signal OSC, for driving one terminal of capacitor 362.Pass transistor 352 is controlled by the complement of signal HVen,referred to as HVenb. The common terminals of decoupling transistor 356and clamp transistor 358 are coupled to high voltage Vhv.

The final output signal BD_out of the each block decoder is commonlyconnected to all of the local row decoders, for example as depicted inFIG. 9.

The operation of local charge pump 350 will now be described. During aread operation, HVenb is at the high logic level and OSC is maintainedat the low logic level. Therefore, circuit elements 362, 354, 356 and358 are inactive, and the output terminal BD_out reflects the logiclevel appearing on BDLCH_out. During a program operation, HVenb is atthe low logic level, and OSC is allowed to oscillate between the highand low logic levels at a predetermined frequency. If the latch outputBDLCH_out is at the high logic level, then capacitor 362 will repeatedlyaccumulate charge on its other terminal and discharge the accumulatedcharge through boost transistor 354. Decoupling transistor 356 isolatesVhv from the boosted voltage on the gate of boost transistor 354. Clamptransistor 358 maintains the voltage level of output terminal BD_out atabout Vhn+Vth, where Vth is the threshold voltage of clamp transistor358. The local charge pump 300 shown in FIG. 9 is one example circuitwhich can be used to drive signals to a voltage levels higher than the asupply voltage VCC, but persons skilled in the art will understand othercharge pump circuits can be used with similar or equal effectiveness.Table 1 below shows example bias conditions for the local charge pump300 during read and program operations.

TABLE 1 Read Program Selected Unselected Selected Unselected BDLCH_(—)Vcc Vss Vcc Vss out Hvenb Vss Vss Vss Vss OSC Oscillation OscillationOscillation Oscillation Vhn Vread7 Vread7 ~Vpgm ~Vpgm (~7 V) (~7 V) (14V~18 V) (14 V~18 V) BD_out Vread7 Vss Vpgm Vss (~7 V) + Vth (14 V~18V) + Vth

The output signal BD_out of the block decoder is raised to Vhv when theblock decoder latch output BDLCH_out is Vcc, HVenb is 0V and the OSC isoscillating.

Referring to FIG. 10, another example of a block decoder uses a blockselection transistor. Vhwl is a high voltage source which has variouslevels based on operations. In this example embodiment, the drivabilityof BD_out is determined by the size of the block selection transistor,not the local charge pump. Therefore this circuit provides strongerdrivability in the case of higher number of local row decoders in theNAND memory core.

FIG. 11 depicts an example of a local row decoder. The local row decoderhas 2048 sector decoders collectively indicated at 500, one per block.These are referred to as sector decoders because a page within a sectoris selected, as opposed to a page within the overall memory array. Theinputs to the local row decoder are page decoder lines which in theillustrated example include string select (SS), wordline select signalsS0-S31 (one per wordline), and ground select (GS). The wordline selectsignals S0-S31 commonly connect to the sector decoders.

Referring now to FIG. 12, an example circuit for a single sector decoderwill be described. String select line SSL, wordlines WL0 to WL31 andground select line GSL are driven by common signals of SS, S0 to S31 andGS through pass transistors TSS, TS0 to TS31 and TGS which are commonlycontrolled by the output signal BD_out of the associated block decoder.The page decoder lines, namely string select signal SS, ground selectsignal GS and common string decode signals S0 to S31, are provided bythe page decoder.

In operation, for the block that is selected, the BD_out input of allthe corresponding sector decoders is activated. This will include onesector decoder for that block in each sector. For all the remainingblocks that were not selected, the BD_out of all the correspondingsector decoders is deactivated. For a sector for which an operation isto be performed, within that sector, all of the sector decoders arecommonly controlled by common page decoder lines. There may be one ormore sectors for which an operation is to be performed. For a sector forwhich no operation is to be performed, all of the common page decoderlines are inactive such that all of the commonly connected sectordecoders are inactive. For a sector decoder that is selected both by aBD_out in a select state, and by page decoder lines that are active, thesector decoder causes a respective selected wordline (one of WL0 throughWL31) to be in a selected state while the remaining wordlines are in ade-selected state.

Table 2 shows an example set of bias conditions to the block decoder,local row decoder and NAND cell array during read, program and erase. Itis to be understood that all values may vary based on cellcharacteristics and process technology.

TABLE 2 Read Program Erase Selected Global Row Vread7 (~7 V) + Vpgm +Vth Vcc Decoder: BD_out Vth Unselected Global Vss (0 V) Vss (0 V) Vss (0V) Row Decoder: BD_out Local Decoder in Selected Sector SS Vread (4~5 V)2 V~Vcc Floating and Vcc- Vth (Self-booting) Selected Si Vss (0 V) Vpgm(14 V~18 V) Vss (0 V) Unselected Si Vread (4~5 V) Vpass (8 V~12 V) — SSLVread (4~5 V) 2 V~Vcc Floating & Self- boosting (70~90% of Vers)Selected WLi Vss (0 V) Vpgm (14 V~18 V) Vss (0 V) Unselected WLi Vread(4~5 V) Vpass (8 V~12 V) — GS Vread (4~5 V) Vss (0 V) Floating and Vcc-Vth (Self-booting) GSL Vread (4~5 V) Vss (0 V) Floating & Self- boosting(70~90% of Vers) Bitlines Pre-charged & Vss (0 V) for Clamp to Vers-0.6V Sensed program & Vcc for Program Inhibit Cell Substrate Vss (0 V) Vss(0 V) Vers (~20 V) Local Decoder in Unselected Sector SS Vss (0 V) Vss(0 V) Vss (0 V) All Si Vss (0 V) Vss (0 V) Vss (0 V) GS Vss (0 V) Vss (0V) Vss (0 V) SSL Vss (0 V) Vss (0 V) Vss (0 V) All WLi Vss (0 V) Vss (0V) Vss (0 V) GSL Vss (0 V) Vss (0 V) Vss (0 V) Bitlines Vss (0 V) Vss (0V) Vss (0 V) Cell Substrate Vss (0 V) Vss (0 V) Vss (0 V)

With this example embodiment, either single sector operation or multiplesector operation can be performed. For read operations, a single sectorpage read and up to a four sector page read in parallel can beperformed. More generally, the maximum number of sectors that can beread in parallel is determined by the number of sectors in the NANDmemory core. For program operations, a single sector page program and upto a four sector page program in parallel can be performed. Moregenerally, the maximum number of sectors that can be programmed inparallel is determined by the number of sectors in the NAND memory core.For erase, a single sector block erase and up to a four sector blockerase in parallel can be performed. More generally, the maximum numberof sectors that can be erased in parallel is determined by the number ofsectors in the NAND memory core.

FIG. 13 shows an example of read operation timing in accordance withsome example embodiments. The voltage bias conditions during read forthis example are defined in Table 2 above for this example. All signalsin each unselected sectors remain at 0V. This operation timing is basedon the use of the block decoder shown in FIG. 9.

FIG. 14 shows an example of program operation timing in accordance withsome example embodiments. The voltage bias conditions during program forthis example are defined in Table 2 above for this example. All signalseach unselected sectors remain at 0V. This operation timing is based onthe use of the block decoder shown in FIG. 9.

FIG. 15 shows an example of erase operation timing in accordance withsome example embodiments. The voltage bias conditions during erase aredefined in Table 2 above for this example. All signals in unselectedsectors remain at 0V. This operation timing is based on the use of theblock decoder shown in FIG. 9.

In FIGS. 13, 14, 15, Sel_Si is short form for any “selected” Si inputsignal (where Si={S₀ . . . S₃₁}). Unsel_Si is short form for any“unselected” Si input signal (where Si={S₀ . . . S₃₁}). Sel_WLi is shortform for any “selected” word line signal (where WLi={WL₀ . . . WL₃₁}).Unsel_WLi is short form for any “unselected” word line signal (whereWLi={WL₀ . . . WL₃₁}).

It will be understood that when an element is herein referred to asbeing “connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is herein referred to as being“directly connected” or “directly coupled” to another element, there areno intervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(i.e., “between” versus “directly between”, “adjacent” versus “directlyadjacent”, etc.).

Certain adaptations and modifications of the described embodiments canbe made. Therefore, the above discussed embodiments are considered to beillustrative and not restrictive.

1-27. (canceled)
 28. A method comprising: Performing multi-level rowdecoding in a NAND flash memory core, the NAND flash memory coreincluding memory cell array sectors; executing first programming for aselected single memory cell array sector; and executing secondprogramming in parallel for a selected plurality of memory cell arraysectors up to all n of the sectors.
 29. The method of claim 28 whereinthe performing of the multi-level row decoding includes: employing aglobal row decoder to perform a first level of row decoding associatedwith all of the n memory cell array sectors; and employing a local rowdecoder of a plurality of local row decoders to perform a second levelof row decoding associated with the selected single memory cell arraysector.
 30. The method of claim 28 wherein each memory cell array sectorof the memory cell array sectors includes respective wordlines and arespective cell substrate, and during the first programming allwordlines and cell substrates of unselected memory cell array sectorsare biased to a common voltage.
 31. The method of claim 30 wherein thecommon voltage is substantially 0V.
 32. The method of claim 28 wherein nis at least four.
 33. The method of claim 32 wherein an unselectedplurality of memory cell array sectors associated with the secondprogramming number at least two and the selected plurality of memorycell array sectors number at least two.
 34. The method of claim 33wherein each memory cell array sector of the memory cell array sectorsincludes respective wordlines and a respective cell substrate, andduring the second programming all wordlines and cell substrates of theunselected plurality of memory cell array sectors are biased to a commonvoltage.
 35. The method of claim 34 wherein the common voltage issubstantially 0V.
 36. The method of claim 28 wherein the selected singlememory cell array sector includes a plurality of columns and a pluralityof rows, and the first programming includes transferring contents of apage buffer circuit of the NAND flash memory core to a selected row ofthe selected single memory cell array sector.
 37. The method of claim 28wherein each of the selected plurality of memory cell array sectorsincludes respective columns and respective rows, and the secondprogramming includes transferring contents of page buffer circuits ofthe NAND flash memory core to selected rows of the selected plurality ofmemory cell array sectors.
 38. A method comprising: Performingmulti-level row decoding in a NAND flash memory core, the NAND flashmemory core including memory cell array sectors; Executing a first erasefor a selected block within a single memory cell array sector; andExecuting a second erase for another selected block in parallel for aselected plurality of memory cell array sectors up to all n of thesectors.
 39. The method of claim 38 wherein the performing of themulti-level row decoding includes: employing a global row decoder toperform a first level of row decoding associated with all of the nmemory cell array sectors; and employing a local row decoder of aplurality of local row decoders to perform a second level of rowdecoding associated with the single memory cell array sector.
 40. Themethod of claim 38 wherein each memory cell array sector of the memorycell array sectors includes respective wordlines and a respective cellsubstrate, and during the first erase all wordlines and cell substratesof unselected memory cell array sectors are biased to a common voltage.41. The method of claim 40 wherein the common voltage is substantially0V.
 42. The method of claim 38 wherein n is at least four.
 43. Themethod of claim 42 wherein an unselected plurality of memory cell arraysectors associated with the second erase number at least two and theselected plurality of memory cell array sectors number at least two. 44.The method of claim 43 wherein each memory cell array sector of thememory cell array sectors includes respective wordlines and a respectivecell substrate, and during the second erase all wordlines and cellsubstrates of the unselected plurality of memory cell array sectors arebiased to a common voltage.
 45. The method of claim 44 wherein thecommon voltage is substantially 0V.